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| Datasheet | 2N4410_D75Z |
| File Size | 294.33 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | 2N4410_D75Z, 2N4410_D74Z, 2N4410_D27Z, 2N4410_D26Z, 2N4410 |
| Description | TRANS NPN 80V 0.2A TO-92, TRANS NPN 80V 0.2A TO-92, TRANS NPN 80V 0.2A TO-92, TRANS NPN 80V 0.2A TO-92, TRANS NPN 80V 0.2A TO-92 |
2N4410_D75Z - ON Semiconductor
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 1V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 1V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 1V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 1V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 1V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |