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| Datasheet | 1N8031-GA |
| File Size | 584.2 KB |
| Total Pages | 5 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 1N8031-GA |
| Description | DIODE SCHOTTKY 650V 1A TO276 |
1N8031-GA - GeneSiC Semiconductor
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1N8031-GA | GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | 229 More on Order |
URL Link
www.oemstron.com/datasheet/1N8031-GA
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.5V @ 1A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 5µA @ 650V Capacitance @ Vr, F 76pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-276AA Supplier Device Package TO-276 Operating Temperature - Junction -55°C ~ 250°C |