Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | 1N6630US |
| File Size | 256.17 KB |
| Total Pages | 4 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | 1N6630US |
| Description | DIODE GEN PURP 900V 1.4A D5B |
1N6630US - Microsemi
The Products You May Be Interested In
 |
1N6630US | Microsemi | DIODE GEN PURP 900V 1.4A D5B | 324 More on Order |
URL Link
www.oemstron.com/datasheet/1N6630US
|
Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 900V Current - Average Rectified (Io) 1.4A Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 4µA @ 100V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case E-MELF Supplier Device Package D-5B Operating Temperature - Junction -65°C ~ 150°C |