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1N6484HE3/96 Datasheet

1N6484HE3/96 Cover
Datasheet1N6484HE3/96
File Size77.41 KB
Total Pages4
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 28 part numbers
Associated Parts 1N6484HE3/96, 1N6483HE3/96, 1N6482HE3/96, 1N6481HE3/96, 1N6480HE3/96, 1N6479HE3/96, 1N6478HE3/96, 1N6484HE3/97, 1N6483HE3/97, 1N6482HE3/97, 1N6481HE3/97, 1N6480HE3/97, 1N6479HE3/97, 1N6478HE3/97, 1N6479-E3/96, 1N6484-E3/97, 1N6483-E3/97, 1N6482-E3/97, 1N6481-E3/97, 1N6480-E3/97, 1N6479-E3/97, 1N6478-E3/97, 1N6483-E3/96, 1N6480-E3/96, 1N6478-E3/96, 1N6482-E3/96, 1N6484-E3/96, 1N6481-E3/96
Description DIODE GEN PURP 1KV 1A DO213AB, DIODE GEN PURP 800V 1A DO213AB, DIODE GEN PURP 600V 1A DO213AB, DIODE GEN PURP 400V 1A DO213AB, DIODE GEN PURP 200V 1A DO213AB

1N6484HE3/96 - Vishay Semiconductor Diodes Division

1N6484HE3/96 Datasheet Page 1
1N6484HE3/96 Datasheet Page 2
1N6484HE3/96 Datasheet Page 3
1N6484HE3/96 Datasheet Page 4

The Products You May Be Interested In

1N6484HE3/96 1N6484HE3/96 Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1A DO213AB 390

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1N6483HE3/96 1N6483HE3/96 Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO213AB 255

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1N6482HE3/96 1N6482HE3/96 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO213AB 113

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1N6481HE3/96 1N6481HE3/96 Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO213AB 149

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1N6480HE3/96 1N6480HE3/96 Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO213AB 421

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1N6479HE3/96 1N6479HE3/96 Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO213AB 352

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1N6478HE3/96 1N6478HE3/96 Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO213AB 160

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1N6484HE3/97 1N6484HE3/97 Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1A DO213AB 478

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1N6483HE3/97 1N6483HE3/97 Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO213AB 281

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1N6482HE3/97 1N6482HE3/97 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO213AB 415

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1N6481HE3/97 1N6481HE3/97 Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO213AB 451

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1N6480HE3/97 1N6480HE3/97 Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO213AB 256

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URL Link

1N6484HE3/96

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6483HE3/96

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6482HE3/96

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6481HE3/96

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 400V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6480HE3/96

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6479HE3/96

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 100V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6478HE3/96

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6484HE3/97

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6483HE3/97

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6482HE3/97

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6481HE3/97

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 400V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C

1N6480HE3/97

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

SUPERECTIFIER®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

8pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-213AB, MELF (Glass)

Supplier Device Package

DO-213AB

Operating Temperature - Junction

-65°C ~ 175°C