Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

1N6080US Datasheet

1N6080US Cover
Datasheet1N6080US
File Size135.43 KB
Total Pages3
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 9 part numbers
Associated Parts 1N6080US, 1N6081US, 1N6079US, 1N6078US, 1N6077US, 1N6076US, 1N6075US, 1N6073US, 1N6074US
Description DIODE GEN PURP 100V 2A G-MELF, DIODE GEN PURP 150V 2A G-MELF, DIODE GEN PURP 50V 2A G-MELF, DIODE GEN PURP 150V 6A D5B, DIODE GEN PURP 100V 6A D5B

1N6080US - Microsemi

1N6080US Datasheet Page 1
1N6080US Datasheet Page 2
1N6080US Datasheet Page 3

The Products You May Be Interested In

1N6080US 1N6080US Microsemi DIODE GEN PURP 100V 2A G-MELF 144

More on Order

1N6081US 1N6081US Microsemi DIODE GEN PURP 150V 2A G-MELF 155

More on Order

1N6079US 1N6079US Microsemi DIODE GEN PURP 50V 2A G-MELF 377

More on Order

1N6078US 1N6078US Microsemi DIODE GEN PURP 150V 6A D5B 469

More on Order

1N6077US 1N6077US Microsemi DIODE GEN PURP 100V 6A D5B 438

More on Order

1N6076US 1N6076US Microsemi DIODE GEN PURP 50V 6A D5B 253

More on Order

1N6075US 1N6075US Microsemi DIODE GEN PURP 150V 3A D5A 225

More on Order

1N6073US 1N6073US Microsemi DIODE GEN PURP 50V 3A D5A 255

More on Order

1N6074US 1N6074US Microsemi DIODE GEN PURP 100V 3A D5A 380

More on Order

URL Link

1N6080US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 37.7A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

10µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, G

Supplier Device Package

G-MELF (D-5C)

Operating Temperature - Junction

-65°C ~ 155°C

1N6081US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 37.7A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

10µA @ 150V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, G

Supplier Device Package

G-MELF (D-5C)

Operating Temperature - Junction

-65°C ~ 155°C

1N6079US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 37.7A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, G

Supplier Device Package

G-MELF (D-5C)

Operating Temperature - Junction

-65°C ~ 155°C

1N6078US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

1.76V @ 18.8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 150V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

E-MELF

Supplier Device Package

D-5B

Operating Temperature - Junction

-65°C ~ 155°C

1N6077US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

1.76V @ 18.8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, E

Supplier Device Package

D-5B

Operating Temperature - Junction

-65°C ~ 155°C

1N6076US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

1.76V @ 18.8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, E

Supplier Device Package

D-5B

Operating Temperature - Junction

-65°C ~ 155°C

1N6075US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

2.04V @ 9.4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

1µA @ 150V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, A

Supplier Device Package

D-5A

Operating Temperature - Junction

-65°C ~ 155°C

1N6073US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

2.04V @ 9.4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

1µA @ 50V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, A

Supplier Device Package

D-5A

Operating Temperature - Junction

-65°C ~ 155°C

1N6074US

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

3A

Voltage - Forward (Vf) (Max) @ If

2.04V @ 9.4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

1µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SQ-MELF, A

Supplier Device Package

D-5A

Operating Temperature - Junction

-65°C ~ 155°C