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1N4150W-G3-08 Datasheet

1N4150W-G3-08 Cover
Datasheet1N4150W-G3-08
File Size91.7 KB
Total Pages3
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts 1N4150W-G3-08, 1N4150W-G3-18
Description DIODE GEN PURP 50V 200MA SOD123, DIODE GEN PURP 50V 200MA SOD123

1N4150W-G3-08 - Vishay Semiconductor Diodes Division

1N4150W-G3-08 Datasheet Page 1
1N4150W-G3-08 Datasheet Page 2
1N4150W-G3-08 Datasheet Page 3

The Products You May Be Interested In

1N4150W-G3-08 1N4150W-G3-08 Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 200MA SOD123 330

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1N4150W-G3-18 1N4150W-G3-18 Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 200MA SOD123 388

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URL Link

1N4150W-G3-08

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

200mA

Voltage - Forward (Vf) (Max) @ If

1V @ 200mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

100nA @ 50V

Capacitance @ Vr, F

2.5pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOD-123

Supplier Device Package

SOD-123

Operating Temperature - Junction

-55°C ~ 150°C

1N4150W-G3-18

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

200mA

Voltage - Forward (Vf) (Max) @ If

1V @ 200mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

100nA @ 50V

Capacitance @ Vr, F

2.5pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOD-123

Supplier Device Package

SOD-123

Operating Temperature - Junction

-55°C ~ 150°C