Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Total Parts | 30/62 |
| Manufacturers | Fagor Electronica, PanJIT Semiconductor, Sanyo Electric Co. Ltd, Vishay Semiconductor GmbH, Formosa Microsemi Co., Ltd, Comchip Technology Corporation, Renessas (Hitachi and Mitsubishi) Ltd., StarHope, Korea Electronics Co. Ltd, Rohm Co., Ltd., Shanghai Lunsure Electronic Technology Co., Ltd, Diodes Inc., Panasonic (Matsushita) Electronics Corp., Littelfuse, Inc., NXP Semiconductors (Philips), Bourns, Inc., Bytesonic Corporation, Central Semiconductor Corp., ITT Intermetall |
| Functions | Zener Diode, P-Channel MOSFET, Transient Voltage supressor, ElectroStatic Discharge Protection Diode, Silicon PNP Transistor, Silicon NPN Transistor, Voltage Detector Integrated Circuit |
| Cases | MicroSMP, SOD-123W, TFSC, CPH3, SOD-323, DO-214AC, DO-215AA, SOT-346, SMF, SOT-416, DO-214AA, DO-221AC, SOD-323FL, S-Mini, SOT-23, SOT-323, SOD-123FL, S-Mini2, SSOP-3 |
| Pins | 1ba, 16fh, 16te, 1d, 5ba, 16ta, 7ba, 8d, 16vdc, 7d, 5d |
| Description |
Vrwm=7.5V, Irsm=46.5A, 600W(1ms), Bidir. 2.280..2.520V, Izt=0.5mA, Zzt=900Ω, 250mW Vrwm=24V, Vbr=27.27..30.14V, Ipp=6.0A, 350w(20µs), Bidir. 32.15..33.79V, Izt=2mA, Zzt=250Ω, 100mW 330V, Iz=0.1mA, 150mW 320..340V, If=200mA, 150mW 6.0V±5%, Izt=20mA, Zzt=7Ω, 200mW Vbr=8.33..9.21V, Vrwm=7.5V, Ipp=58.8A, 150W (1ms) Vbr=9.50..10.5V, Vrwm=8.55V, 29.0A, 400W(1ms) Vrwm=7.5V, 31A, 400W (1ms) Vrwm=7.5V, Vbr=8.33..10.67V, 46.5A, 600W(1ms), Bidir. Vbr=8.33..9.21V, Vrwm=7.5V, Ipp=15.5A, 200W(1ms) Vrwm=26V, Vbr=28.90..31.90V, 9.5A, 400W (1ms) Vrwm=7.5V, Vbr=8.33..9.21V, 46.6A, 600W(1ms) Vrwm=7.5V, Vbr=8.33..9.21V, 31A, 400W(1ms) Vrwm=7.5V, Vbr=8.33..9.58V, 46.5A, 600W(1ms), Bidir. Vrwm=7.5V, Vbr=8.33..9.58V, 46.5A, 600W(1ms), Bidir. Vrwm=7.5V, Vbr=8.33..9.58V, 46.5A, 600W(1ms), Bidir. Vbr=8.33..9.21V, Vrwm=7.5V, Ipp=15.5A, 200W(1ms) Vbr=8.33V, Vrwm=7.5V, Ipp=15.5A, 200W(1ms) |
| SMD Code | A | Part Number | Manufacturer | Case | Pin | Description | |
|---|---|---|---|---|---|---|---|
| AP | - | CD214B-T7.5CA | Brn | DO-214AA | 1ba | Transient Voltage supressor Vrwm=7.5V, Irsm=46.5A, 600W(1ms), Bidir. |
|
| AP | - | CMDZ2L4 | Cen | SOD-323 | 5d | Zener Diode 2.280..2.520V, Izt=0.5mA, Zzt=900Ω, 250mW |
|
| AP | - | ESDA3L24C | Frm | SOD-323FL | 7ba | Transient Voltage supressor Vrwm=24V, Vbr=27.27..30.14V, Ipp=6.0A, 350w(20µs), Bidir. |
|
| AP | - | KDZ33FVY | Kec | TFSC | 7d | Zener Diode 32.15..33.79V, Izt=2mA, Zzt=250Ω, 100mW |
|
| AP | - | MA5Z330-L | Pan | S-Mini | 8d | Zener Diode 330V, Iz=0.1mA, 150mW |
|
| AP | - | MAZU330-L | Pan | S-Mini2 | 8d | Zener Diode 320..340V, If=200mA, 150mW |
|
| AP | - | MM3Z5233B | Bts | SOD-323FL | 7d | Zener Diode 6.0V±5%, Izt=20mA, Zzt=7Ω, 200mW |
|
| AP | - | MSMP7.5A | Vs | MicroSMP | 8d | Transient Voltage supressor Vbr=8.33..9.21V, Vrwm=7.5V, Ipp=58.8A, 150W (1ms) |
|
| AP | - | P4SMA10A | Fag | DO-214AC | 1d | Transient Voltage supressor Vbr=9.50..10.5V, Vrwm=8.55V, 29.0A, 400W(1ms) |
|
| AP | - | P4SMAJ7.5A | Lsr | DO-214AC | 1d | Transient Voltage supressor Vrwm=7.5V, 31A, 400W (1ms) |
|
| AP | - | P6SMBJ7.5CA | Pjt | DO-214AA | 1ba | Transient Voltage supressor Vrwm=7.5V, Vbr=8.33..10.67V, 46.5A, 600W(1ms), Bidir. |
|
| AP | - | PMF7.5A | Shp | SOD-123FL | 7d | Transient Voltage supressor Vbr=8.33..9.21V, Vrwm=7.5V, Ipp=15.5A, 200W(1ms) |
|
| AP | - | PTVS26VS1UR | Nxp | SOD-123W | 7d | Transient Voltage supressor Vrwm=26V, Vbr=28.90..31.90V, 9.5A, 400W (1ms) |
|
| AP | - | SMA6L7.5A | Lif | DO-221AC | 7d | Transient Voltage supressor Vrwm=7.5V, Vbr=8.33..9.21V, 46.6A, 600W(1ms) |
|
| AP | - | SMAJ7.5A | Vs | DO-214AC | 1d | Transient Voltage supressor Vrwm=7.5V, Vbr=8.33..9.21V, 31A, 400W(1ms) |
|
| AP | - | SMBG7.5CA | Vs | DO-215AA | 5ba | Transient Voltage supressor Vrwm=7.5V, Vbr=8.33..9.58V, 46.5A, 600W(1ms), Bidir. |
|
| AP | - | SMBJ7.5CA | Vs | DO-214AA | 1ba | Transient Voltage supressor Vrwm=7.5V, Vbr=8.33..9.58V, 46.5A, 600W(1ms), Bidir. |
|
| AP | - | SMBJ7.5CA | Di | DO-214AA | 1ba | Transient Voltage supressor Vrwm=7.5V, Vbr=8.33..9.58V, 46.5A, 600W(1ms), Bidir. |
|
| AP | - | SMF7.5A | Lif | SMF | 1d | Transient Voltage supressor Vbr=8.33..9.21V, Vrwm=7.5V, Ipp=15.5A, 200W(1ms) |
|
| AP | - | SMF7V5A | Vs | SMF | 7d | ElectroStatic Discharge Protection Diode Vbr=8.33V, Vrwm=7.5V, Ipp=15.5A, 200W(1ms) |
|
| AP | - | TV04A7V5J-G | Cmc | DO-214AC | 1d | Transient Voltage supressor Vrwm=7.50V, Vbr=8.33..9.21V, Ipp=31.01A, 400W(1ms) |
|
| AP | - | TV06B7V5JB-G | Cmc | DO-214AA | 1ba | Transient Voltage supressor Vrwm=7.50V, Vbr=8.33..9.21V, Ipp=46.51A, 600W(1ms), Bidir. |
|
| aP | - | BU45K342G | Rhm | SSOP-3 | 16vdc | Voltage Detector Integrated Circuit 3.4V±1%, -Reset ODO, Td=200ms |
|
| Ap | - | BD48K34G | Rhm | SSOP-3 | 16vdc | Voltage Detector Integrated Circuit 3.4V±1%, -Reset ODO |
|
| AP | - | 2SC2413K-P | Rhm | SOT-346 | 16ta | Silicon NPN Transistor HF-Amp, 40V, 50mA, 200mW, B=82..180, 300MHz |
|
| AP | - | 2SC4098-P | Rhm | SOT-323 | 16ta | Silicon NPN Transistor HF-Amp, 40V, 50mA, 200mW, B=82..180, >350MHz |
|
| AP | - | 2SC4618-P | Rhm | SOT-416 | 16ta | Silicon NPN Transistor HF-Amp, 40V, 50mA, 150mW, B=82..180, 300MHz |
|
| AP | - | 2SJ575 | Ren | SOT-23 | 16fh | P-Channel MOSFET V-MOS, LogL, 30V, 0.1A, <7.9Ω |
|
| AP | - | BCW60BR | Itt | SOT-23 | 16te | Silicon NPN Transistor GP, 32V, 200mA, 250mW, B=150..310, 250MHz |
|
| AP | - | CPH3114 | San | CPH3 | 16ta | Silicon PNP Transistor DC/DC-Conv, 15V, 1.5A, 900mW, 350MHz, B=200..560 |