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| Part Number | TRS8E65C,S1Q |
| OEMstron Part # | TRS8E65C-S1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Description | DIODE SCHOTTKY 650V 8A TO220-2L |
| Lifecycle | Last Time Buy |
| RoHS | No RoHS Information |
| EDA/CAD Models | TRS8E65C,S1Q PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jun 10 - Jun 15 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
TRS8E65C Specifications
| Part Number | TRS8E65C,S1Q | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Last Time Buy | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Diodes & Rectifiers | |
| Subcategory | Rectifiers - Single | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Diode Type | Silicon Carbide Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Current - Average Rectified (Io) | 8A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 8A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0ns | |
| Current - Reverse Leakage @ Vr | 90µA @ 650V | |
| Capacitance @ Vr, F | 44pF @ 650V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | TO-220-2L | |
| Operating Temperature - Junction | 175°C (Max) |
TRS8E65C,S1Q Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
TRS8E65C,S1Q D# V36:1790_13896284 Toshiba America Electronic Components |
Sic Schottky Barrier Diode RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
TRS8E65C,S1Q D# TRS8E65CS1Q-ND Toshiba America Electronic Components |
DIODE SCHOTTKY 650V 8A TO220-2L |
Limited Supply - Call |
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