Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SQJ872EP-T1_GE3 Datasheet

SQJ872EP-T1_GE3 Cover
DatasheetSQJ872EP-T1_GE3
File Size290.29 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SQJ872EP-T1_GE3
Description MOSFET N-CHAN 150V

SQJ872EP-T1_GE3 - Vishay Siliconix

SQJ872EP-T1_GE3 Datasheet Page 1
SQJ872EP-T1_GE3 Datasheet Page 2
SQJ872EP-T1_GE3 Datasheet Page 3
SQJ872EP-T1_GE3 Datasheet Page 4
SQJ872EP-T1_GE3 Datasheet Page 5
SQJ872EP-T1_GE3 Datasheet Page 6
SQJ872EP-T1_GE3 Datasheet Page 7
SQJ872EP-T1_GE3 Datasheet Page 8
SQJ872EP-T1_GE3 Datasheet Page 9
SQJ872EP-T1_GE3 Datasheet Page 10

The Products You May Be Interested In

SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 Vishay Siliconix MOSFET N-CHAN 150V 207

More on Order

URL Link

SQJ872EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

24.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

35.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1045pF @ 25V

FET Feature

-

Power Dissipation (Max)

55W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

8-PowerTDFN