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SI7252DP-T1-GE3 Datasheet

SI7252DP-T1-GE3 Cover
DatasheetSI7252DP-T1-GE3
File Size378.12 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7252DP-T1-GE3
Description MOSFET 2N-CH 100V 36.7A PPAK 8SO

SI7252DP-T1-GE3 - Vishay Siliconix

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SI7252DP-T1-GE3 SI7252DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 100V 36.7A PPAK 8SO 465

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URL Link

SI7252DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

36.7A

Rds On (Max) @ Id, Vgs

18mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1170pF @ 50V

Power - Max

46W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual