Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

GP1M008A080H Datasheet

GP1M008A080H Cover
DatasheetGP1M008A080H
File Size1,382.17 KB
Total Pages7
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts GP1M008A080H, GP1M008A080FH
Description MOSFET N-CH 800V 8A TO220, MOSFET N-CH 800V 8A TO220F

GP1M008A080H - Global Power Technologies Group

GP1M008A080H Datasheet Page 1
GP1M008A080H Datasheet Page 2
GP1M008A080H Datasheet Page 3
GP1M008A080H Datasheet Page 4
GP1M008A080H Datasheet Page 5
GP1M008A080H Datasheet Page 6
GP1M008A080H Datasheet Page 7

The Products You May Be Interested In

GP1M008A080H GP1M008A080H Global Power Technologies Group MOSFET N-CH 800V 8A TO220 271

More on Order

GP1M008A080FH GP1M008A080FH Global Power Technologies Group MOSFET N-CH 800V 8A TO220F 268

More on Order

URL Link

GP1M008A080H

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1921pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

GP1M008A080FH

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1921pF @ 25V

FET Feature

-

Power Dissipation (Max)

40.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack