Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FCA16N60_F109 Datasheet

FCA16N60_F109 Cover
DatasheetFCA16N60_F109
File Size987.57 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FCA16N60_F109, FCA16N60
Description MOSFET N-CH 600V 16A TO-3P, MOSFET N-CH 600V 16A TO-3P

FCA16N60_F109 - ON Semiconductor

FCA16N60_F109 Datasheet Page 1
FCA16N60_F109 Datasheet Page 2
FCA16N60_F109 Datasheet Page 3
FCA16N60_F109 Datasheet Page 4
FCA16N60_F109 Datasheet Page 5
FCA16N60_F109 Datasheet Page 6
FCA16N60_F109 Datasheet Page 7
FCA16N60_F109 Datasheet Page 8
FCA16N60_F109 Datasheet Page 9

The Products You May Be Interested In

FCA16N60_F109 FCA16N60_F109 ON Semiconductor MOSFET N-CH 600V 16A TO-3P 447

More on Order

FCA16N60 FCA16N60 ON Semiconductor MOSFET N-CH 600V 16A TO-3P 294

More on Order

URL Link

FCA16N60_F109

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

FCA16N60

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3