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ECH8308-TL-H Datasheet

ECH8308-TL-H Cover
DatasheetECH8308-TL-H
File Size199.99 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts ECH8308-TL-H
Description MOSFET P-CH 12V 10A ECH8

ECH8308-TL-H - ON Semiconductor

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URL Link

ECH8308-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-ECH

Package / Case

8-SMD, Flat Lead